Quantum Information Group, Single Electron Spin Injection
In today's world, microelectronic devices are based on the charge of electrons moving between components and being stored as needed. However, as the miniaturization of these devices continues and quantum mechanics becomes more important, using a non-classical property of the electron, its spin, for information processing has gained increasing attention, establishing the field of spintronics (short for spin-based electronics). As the spin carries information on the response of the electron to magnetic field, the term magneto-electronics is also often used.
Our research at Toshiba focuses on hybrid structures where the aim is to combine magnetic metals, grown in the molecular beam epitaxy chamber shown in the photo, with semiconductor devices. The spin-information of the electron is determined by the magnetic state of the metal (which is externally controllable) and then transferred into the active device leading to spin-injection. More complicated structures, such as a spin valve, where the state of the spin is also selected on the detection side are also envisioned. The hope is to push the limit of 100% efficiency for preparation and detection of the spin state by choosing the right magnetic metal and engineering the interface between metal and semiconductor carefully. These efficiencies will be required for quantum communication devices as well as solid state quantum computers.
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